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| TS788 N- channel Junction FET Electret Condenser Microphone TENTATIVE Features * Especially suited for use in electret condenser microphone. * TS788 is possible to make applied sets smaller and Slimmer. * Excellent voltage characteristics. * Excellent transient characteristics. * Adoption of FBET process. Absolute Maximum Ratings / Ta=25C Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VGDO IG ID PD Tj Tstg --20 10 1 100 150 --55to+150 min --20 --0.2 140g 0.4 unit V mA mA mW C C typ --0.6 1.2 4.1 0.88 max --1.5 500g unit V V A mS pF pF Electrical Characteristics / Ta=25C G-D Breakdown Voltage V( BR)GDO IG =--100A VGS(off) VDS=5V, ID=1A Cutoff Voltage IDSS VDS=5V, VGS=0 Drain Current | Yfs | VDS=5V, VGS=0, f=1kHz Forward Transfer Admittance Ciss VDS=5V, VGS=0, f=1MHz Input Capacitance VDS=5V, VGS=0, f=1MHz Crss Reverce Transfer Capacitance g : The TS788 is classified by IDSS as follows : (unit : A) Marking IDSS E4 140 to 240 E5 210 to 350 E6 320 to 500 [Ta=25C, VCC=4.5V, RL=1k, CIN=15pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristics Frequency Characteristics Input Resistance Output Resistance Total Harmonic Distortion Output Noise Voltage Test Circuit Voltage Gain Frequency Characteristics Distortion Reduced Voltage Characteristics 1k Vcc=4.5V Vcc=1.5V 0.2 min typ --3.0 --1.2 max --3.5 --1.0 unit dB dB dB m % dB GV GVV GVf ZIN Zo THD VNO VIN=10mV, f=1kHz VIN=10mV, f=1kHz VCC=4.51.5V f=1kHz to 110Hz f=1kHz f=1kHz VIN=30mV, f=1kHz VIN=0 , A curve 25 700 1.0 --110 Package Dimensions SMCP (unit : mm) 0.3 0.8 3 1 1.0 1.6 2 1.6 0.1 0 to 0.1 0.4 15pF 33uF + to OSC SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 971128TM2fXHD 0.6 0.75 VTVM V THD B A 1k Output Impedance 1 : Drain 2 : Source 3 : Gate |
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